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UNISONIC TECHNOLOGIES CO., LTD 19N10
100V N-Channel MOSFET
DESCRIPTION
The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC's planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Power MOSFET
FEATURES
* RDS(ON) = 0.1 @VGS = 10 V * Ultra low gate charge ( typical 19nC ) * Low reverse transfer Capacitance ( CRSS = typical 32pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 19N10L-T3P-T 19N10G-T3P-T 19N10L-TA3-T 19N10G-TA3-T 19N10L-TM3-T 19N10G-TM3-T 19N10L-TN3-R 19N10G-TN3-R 19N10L-TQ2-R 19N10G-TQ2-R 19N10L-TQ2-T 19N10G-TQ2-T Package TO-3P TO-220 TO-251 TO-252 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tape Reel Tube
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www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS 25 V Continuous Drain Current ID 15.6 A Pulsed Drain Current (Note 2) IDM 62.4 A Avalanche Current (Note 2) IAR 15.6 A Single Pulsed Avalanche Energy (Note 3) EAS 220 mJ Repetitive Avalanche Energy (Note 2) EAR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 6.0 V/ns 50 W TO-251/TO-252 Power Dissipation PD 62.5 W TO-220/TO-263 178 W TO-3P Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L=1.35mH, IAS=15.6A, VDD=25V, RG=25 , Starting TJ=25C 4. ISD19A, di/dt 300A/s, VDDBVDSS, Starting TJ=25C
THERMAL DATA
PARAMETER TO-251/TO-252 Junction to Ambient TO-220/TO-263 TO-3P TO-251/TO-252 Junction to Case TO-220/TO-263 TO-3P SYMBOL JA RATINGS 50 62.5 40 2.5 2.0 0.7 UNIT C/W C/W C/W C/W C/W C/W
JC
ELECTRICAL CHARACTERISTICS (TJ=25C, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL BVDSS TEST CONDITIONS MIN 100 0.1 1 100 -100 2.0 0.078 4.0 0.1 11 780 215 40 TYP MAX UNIT V V/C A nA V S pF pF pF
VGS=0V, ID=250A I =250A, BVDSS/TJ D Referenced to 25C VDS=100V, VGS=0V IDSS VGS=25V, VDS=0V IGSS VGS=-25V, VDS=0V VGS(TH) RDS(ON) gFS CISS COSS CRSS VDS=VGS, ID=250A VGS=10V, ID=7.8A VDS=40V, ID=7.8A (Note 1)
VDS=25V, VGS=0V, f=1.0MHz
600 165 32
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UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
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ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER SYMBOL TEST CONDITIONS SWITCHING PARAMETERS Total Gate Charge QG VDS=80V, ID=19A, VGS=10V Gate Source Charge QGS (Note 1, 2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=50V, ID=19A, RG=25 (Note 1, 2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS=0V, IS=15.6A Maximum Body-Diode Continuous Current IS Maximum Pulsed Drain-Source Diode ISM Forward Current Body Diode Reverse Recovery Time tRR VGS= 0V, IS=19A, dIF/dt=100A/s (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test : Pulse width 300s, Duty cycle 2% Note: 2. Essentially independent of operating temperature MIN
Power MOSFET
TYP 19 3.9 9.0 7.5 150 20 65
MAX UNIT 25 nC
25 310 50 140 1.5 15.6 62.4
ns ns ns ns V A A ns nC
78 200
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TEST CIRCUITS AND WAVEFORMS
+ VDS + L
Power MOSFET
D.U.T.
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
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Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD
Power MOSFET
VDS VGS RG
VDS
90%
10V
Pulse Width 1s Duty Factor0.1%
D.U.T.
VGS
10%
tD(ON) tR tD(OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
10V QGS
QG
QGD
VGS
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
VDS
L BVDSS IAS
R
D
VDD D.U.T. VDD
ID(t)
VDS(t)
10V tp
tp
Time
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Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or www..com other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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